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Power MOSFET SOT-23-3

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    MPN SI2301CDS-T1-GE3
    Mfr. Vishay
    Oneyac # A33-SI2301CDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 10nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 405pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 860mW(Ta),1.6W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    FET type P-Channel
    Drain source voltage Vds -20V
    Continuous drain current Id -3.1A
    Rds On(Max)@Id,Vgs 112mΩ@2.8A,4.5V
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    In Stock :  2,997

    Qty. Unit Price Ext. Price
    70+ $0.3393 $23.751
    100+ $0.2637 $26.37
    500+ $0.2121 $106.05
    1,000+ $0.2028 $202.8
    2,000+ $0.1948 $389.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 70 Mult. 1

    Special Note

    Production Year: 2023

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