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Power MOSFET HSMT

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    MPN RQ3E075ATTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RQ3E075ATTB-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 10.4nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 930pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 15W(Tc)
    Rds On(Max)@Id,Vgs 23mΩ@7.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure HSMT
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 7.5A
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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

    In Stock :  3,000

    Qty. Unit Price Ext. Price
    30+ $0.9461 $28.383
    50+ $0.5552 $27.76
    100+ $0.5274 $52.74
    500+ $0.4916 $245.8
    1,000+ $0.4744 $474.4
    2,000+ $0.4413 $882.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2022

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