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Power MOSFET BSP295 H6327 TO-261-4,TO-261AA

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    MPN BSP295H6327XTSA1
    Other # BSP295 H6327
    Mfr. Infineon
    Oneyac # A36-BSP295H6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-261-4,TO-261AA Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    On resistance at different Id and Vgs (maximum) 300 milliohm @ 1.8A, 10V
    Drain-Source Voltage (Vdss) 60V
    Package/Enclosure TO-261-4,TO-261AA
    Vgs(th) (maximum) when different Id 1.8V @ 400uA
    Current at 25°C-Continuous Drain (Id) 1.8A(Ta)
    Input capacitance (Ciss) (maximum) at different Vds 368pF @ 25V
    Gate charge at different VGS (QG) (maximum) 17nC @ 10V
    fet type n channel
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 1.8W(Ta)
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
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    In Stock :  21

    Qty. Unit Price Ext. Price
    20+ $0.5233 $10.466

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 23+

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