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Power Mosfet IPD50R3K0CE TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD50R3K0CEAUMA1
    Other # IPD50R3K0CE
    Mfr. Infineon
    Oneyac # A36-IPD50R3K0CEAUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    technology MOSFET (metal oxide)
    Gate charge at different VGS (QG) (maximum) 4.3nC @ 10V
    Operating temperature -55°C ~ 150°C(TJ)
    Current at 25°C-Continuous Drain (Id) 1.7A(Tc)
    Vgs(Max) ±20V
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 84pF @ 100V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Drain-Source Voltage (Vdss) 500V
    Power dissipation (maximum) 26W(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 13V
    Vgs(th) (maximum) when different Id 3.5V @ 30uA
    On resistance at different Id and Vgs (maximum) 3 ohm @ 400mA, 13V
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    In Stock :  615

    Qty. Unit Price Ext. Price
    30+ $0.2526 $7.578
    100+ $0.1947 $19.47

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: 22+

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