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Power MOSFET IPD50R3K0CE TO-252-3, DPak (2 leads+tab), SC-63

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    MPN IPD50R3K0CEAUMA1
    Other # IPD50R3K0CE
    Mfr. Infineon
    Oneyac # A36-IPD50R3K0CEAUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 1.7A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 3 ohms @ 400mA, 13V
    Vgs (th) (maximum value) for different IDs 3.5V @ 30uA
    Input capacitance (Ciss) at different Vds (maximum value) 84pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 4.3nC @ 10V
    Power dissipation (maximum value) 26W(Tc)
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 500V
    Drive voltage (maximum RdsOn, minimum RdsOn) 13V
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    In Stock :  615

    Qty. Unit Price Ext. Price
    30+ $0.2723 $8.169
    100+ $0.21 $21

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: 22+

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