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Power MOSFET PQFN(3x3)

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    MPN IRFHM830TRPBF
    Mfr. Infineon
    Oneyac # A36-IRFHM830TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 6 mO 15 nC SMT HexFet Power Mosfet - PQFN 3.3 x 3.3 mm

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.35V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 31nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2155pF @ 25V
    Pd power dissipation (Max) 2.7W(Ta),37W(Tc)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 31nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2155pF @ 25V
    Rds On(Max)@Id,Vgs 3.8mΩ@20A,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 21A
    Package/Enclosure PQFN(3x3)
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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    In Stock :  4,000

    Qty. Unit Price Ext. Price
    20+ $0.4138 $8.276
    100+ $0.3316 $33.16
    1,000+ $0.2951 $295.1
    2,000+ $0.2799 $559.8

    Full Reel (Order in multiples of 4000)
    4,000+ $0.2662 $1,064.8

    Unit Price：$

    Ext. Price：$
    When unpacking without original label and tray！
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: Within 2 years

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