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Power MOSFET SPD02N80C3 TO-252-3, DPak (2 leads+tab), SC-63

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    MPN SPD02N80C3ATMA1
    Other # SPD02N80C3
    Mfr. Infineon
    Oneyac # A36-SPD02N80C3ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 2A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 2.7 ohms @ 1.2A, 10V
    Vgs (th) (maximum value) for different IDs 3.9V @ 120uA
    Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 16nC @ 10V
    Power dissipation (maximum value) 42W(Tc)
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  1,878

    Qty. Unit Price Ext. Price
    9+ $0.8579 $7.7211
    100+ $0.7149 $71.49
    1,250+ $0.6495 $811.875

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 9 Mult. 1

    Special Note

    Production Date: 23+

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