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Power Mosfet BSS84PW H6327

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    MPN BSS84PWH6327XTSA1
    Other # BSS84PW H6327
    Mfr. Infineon
    Oneyac # A36-BSS84PWH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25 ° C - Continuous Drain (Id) 150mA(Ta)
    FET type P channel
    Vgs (maximum value) ±20V
    Vgs (th) (maximum value) for different IDs 2V @ 20uA
    Input capacitance (Ciss) at different Vds (maximum value) 19.1pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 1.5nC @ 10V
    Power dissipation (maximum value) 300mW(Ta)
    Encapsulation/shell SC-70,SOT-323
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 60V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    In Stock :  2,798

    Qty. Unit Price Ext. Price
    160+ $0.0401 $6.416
    200+ $0.0387 $7.74
    1,500+ $0.0384 $57.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 160 Mult. 1

    Special Note

    Production Date: 24+

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    BSS84PW Infineon  Datasheet Small signal MOSFET

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