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Power MOSFET BSS83P H6327 TO-236-3,SC-59,SOT-23-3

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    MPN BSS83PH6327XTSA1
    Other # BSS83P H6327
    Mfr. Infineon
    Oneyac # A36-BSS83PH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    P-Channel 60 V 0.33 A 2 O 2.38 nC SipMOS Small Signal Transistor - SOT-23

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 330mA(Ta)
    FET type P channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 2 ohms @ 330mA, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 80uA
    Input capacitance (Ciss) at different Vds (maximum value) 78pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 3.57nC @ 10V
    Power dissipation (maximum value) 360mW(Ta)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 60V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    In Stock :  13,651

    Qty. Unit Price Ext. Price
    70+ $0.0988 $6.916
    200+ $0.0804 $16.08
    1,500+ $0.0732 $109.8

    Full Reel (Order in multiples of 3000)

    3,000+ $0.0684 $205.2

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 70 Mult. 1

    Special Note

    Production Date: Within 2 years

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