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Power MOSFET TO-220AB

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    MPN IRLB3813PBF
    Mfr. Infineon
    Oneyac # A36-IRLB3813PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.35V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 86nC @ 4.5V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 8420pF @ 15V
    Pd power dissipation (Max) 230W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 86nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 8420pF @ 15V
    Rds On(Max)@Id,Vgs 1.95mΩ@60A,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 260A
    Package/Enclosure TO-220AB
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    In Stock :  100

    Qty. Unit Price Ext. Price
    10+ $0.7028 $7.028
    100+ $0.5309 $53.09

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 10 Mult. 1

    Special Note

    Production Date: 23+

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