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Small signal MOSFET BSR315P H6327 PG-SC59-3

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    MPN BSR315PH6327XTSA1
    Other # BSR315P H6327
    Mfr. Infineon
    Oneyac # A36-BSR315PH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-SC59-3 Series : SIPMOS®

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Series SIPMOS®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 160µA
    Gate charge (Qg) at different Vgs (maximum value) 6nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 176pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 500mW(Ta)
    Rds On(Max)@Id,Vgs 800mΩ@620mA,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure PG-SC59-3
    FET type P-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 0.62A
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    In Stock :  1,563

    Qty. Unit Price Ext. Price
    40+ $0.2206 $8.824
    100+ $0.1765 $17.65
    750+ $0.1582 $118.65
    1,500+ $0.1485 $222.75

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Date: Within 2 years

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