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Power MOSFET BSC070N10NS3 G 8-PowerTDFN

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    MPN BSC070N10NS3GATMA1
    Other # BSC070N10NS3 G
    Mfr. Infineon
    Oneyac # A36-BSC070N10NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 90A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 7 milliohms @ 50A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 75uA
    Input capacitance (Ciss) at different Vds (maximum value) 4000pF @ 50V
    Gate charge (Qg) at different Vgs (maximum value) 55nC @ 10V
    Power dissipation (maximum value) 114W(Tc)
    Package/Enclosure 8-PowerTDFN
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 100V
    Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
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    In Stock :  2,313

    Qty. Unit Price Ext. Price
    10+ $0.6967 $6.967
    100+ $0.5796 $57.96
    1,250+ $0.537 $671.25

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 10 Mult. 1

    Special Note

    Production Date: Within 2 years

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