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Power MOSFET PQFN(5x6)

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    MPN IRFH8318TRPBF
    Mfr. Infineon
    Oneyac # A36-IRFH8318TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PQFN(5x6)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.35V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 41nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3180pF @ 10V
    Pd power dissipation (Max) 3.6W(Ta),59W(Tc)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.35V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 41nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3180pF @ 10V
    Rds On(Max)@Id,Vgs 3.1mΩ@20A,10V
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 27A
    Package/Enclosure PQFN(5x6)
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    In Stock :  3,098

    Qty. Unit Price Ext. Price
    20+ $0.356 $7.12
    100+ $0.286 $28.6
    1,000+ $0.2541 $254.1
    2,000+ $0.2404 $480.8

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 22+

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