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Power Mosfet 8-SO

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    MPN IRF7413ZTRPBF
    Mfr. Infineon
    Oneyac # A36-IRF7413ZTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate Charge (Qg) at Different Vgs (Maximum) 14nC @ 4.5V
    Vgs (th) (maximum) at different Ids 2.25V @ 25µA
    Operating temperature -55°C~150°C(TJ)
    fet type N-Channel
    Package/Enclosure 8-SO
    Gate Charge (Qg) at Different Vgs (Maximum) 14nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum) 1210pF @ 15V
    Drain-source voltage Vds 30V
    Pd-power dissipation (Max) 2.5W(Ta)
    Vgs (th) (maximum) at different Ids 2.25V @ 25µA
    Gate voltage Vgs ±20V
    Series HEXFET®
    Continuous Drain Current Id 13A
    Rds On(Max)@Id,Vgs 10mΩ@13A,10V
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Input capacitance (Ciss) at different Vds (maximum) 1210pF @ 15V
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    In Stock :  73

    Qty. Unit Price Ext. Price
    20+ $0.4219 $8.438

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 22+

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