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MOSFET SOT-23-3

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    MPN DMN30H4D0L-13
    Mfr. Diodes Incorporated
    Oneyac # A36-DMN30H4D0L-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 310mW(Ta)
    RdsOn(Max)@Id,Vgs 4Ω@300mA,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 187.3 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 7.6 nC @ 10 V
    Package/Enclosure SOT-23-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 300V
    Continuous drain current Id 250mA(Ta)
    driving voltage 2.7V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  3,087

    Qty. Unit Price Ext. Price
    40+ $0.2282 $9.128
    100+ $0.1841 $18.41
    500+ $0.1674 $83.7
    2,500+ $0.1567 $391.75

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 10,000 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Date: 22+

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