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MOSFET X1-DFN1006-3

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    MPN DMN21D2UFB-7B
    Mfr. Diodes Incorporated
    Oneyac # A36-DMN21D2UFB-7B
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : X1-DFN1006-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 380mW(Ta)
    RdsOn(Max)@Id,Vgs 990mΩ@100mA,4.5V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 27.6 pF @ 16 V
    Gate charge (Qg) at different Vgs (maximum value) 0.93 nC @ 10 V
    Package/Enclosure X1-DFN1006-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 20V
    Continuous drain current Id 760mA(Ta)
    driving voltage 1.5V,4.5V
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    In Stock :  387

    Qty. Unit Price Ext. Price
    80+ $0.0883 $7.064
    100+ $0.072 $7.2

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 10,000 ETD HK 1~2 Weeks
    Min. 80 Mult. 1

    Special Note

    Production Date: 23+

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