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MOSFET SOT-23-3

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    MPN DMN10H220LQ-13
    Mfr. Diodes Incorporated
    Oneyac # A36-DMN10H220LQ-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 1.3W(Ta)
    RdsOn(Max)@Id,Vgs 220mΩ@1.6A,10V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 401 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 8.3 nC @ 10 V
    Package/Enclosure SOT-23-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 100V
    Continuous drain current Id 1.6A(Ta)
    driving voltage 4.5V,10V
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    In Stock :  6,422

    Qty. Unit Price Ext. Price
    70+ $0.105 $7.35
    100+ $0.0858 $8.58
    500+ $0.0779 $38.95
    2,500+ $0.0721 $180.25
    5,000+ $0.0675 $337.5

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 10,000 ETD HK 1~2 Weeks
    Min. 70 Mult. 1

    Special Note

    Production Date: 22+

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