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MOSFET 8-SO

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    MPN DMN4800LSSQ-13
    Mfr. Diodes Incorporated
    Oneyac # A36-DMN4800LSSQ-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 1.46W(Ta)
    RdsOn(Max)@Id,Vgs 14mΩ@9A,10V
    Gate voltage Vgs ±25V
    Input capacitance (Ciss) at different Vds (maximum value) 798 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 8.7 nC @ 5 V
    Package/Enclosure 8-SO
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 30V
    Continuous drain current Id 8.6A(Ta)
    driving voltage 4.5V,10V
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    In Stock :  1,359

    Qty. Unit Price Ext. Price
    40+ $0.2221 $8.884
    100+ $0.1704 $17.04
    1,250+ $0.145 $181.25

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Date: 23+

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