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MOSFET TO-252-3

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    MPN DMT8012LK3-13
    Mfr. Diodes Incorporated
    Oneyac # A36-DMT8012LK3-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 2.7W(Ta)
    RdsOn(Max)@Id,Vgs 17mΩ@12A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1949 pF @ 40 V
    Gate charge (Qg) at different Vgs (maximum value) 34 nC @ 10 V
    Package/Enclosure TO-252-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 80V
    Continuous drain current Id 44A(Tc)
    driving voltage 4.5V,10V
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    In Stock :  2,357

    Qty. Unit Price Ext. Price
    20+ $0.4974 $9.948
    100+ $0.4138 $41.38
    1,250+ $0.3757 $469.625

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: Within 2 years

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