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MOSFET X1-DFN1212-3

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    MPN DMN62D0LFD-7
    Mfr. Diodes Incorporated
    Oneyac # A36-DMN62D0LFD-7
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : X1-DFN1212-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 480mW(Ta)
    RdsOn(Max)@Id,Vgs 2Ω@100mA,4V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 31 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 500 pF @ 4.5 V
    Package/Enclosure X1-DFN1212-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 60V
    Continuous drain current Id 310mA(Ta)
    driving voltage 1.8V,4V
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    In Stock :  2,530

    Qty. Unit Price Ext. Price
    100+ $0.075 $7.5
    200+ $0.0484 $9.68
    1,500+ $0.0421 $63.15

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 100 Mult. 1

    Special Note

    Production Date: 22+

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