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MOSFET PowerDI5060-8

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    MPN DMT10H010LPS-13
    Mfr. Diodes Incorporated
    Oneyac # A36-DMT10H010LPS-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerDI5060-8

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 1.2W(Ta),139W(Tc)
    RdsOn(Max)@Id,Vgs 9.5mΩ@13A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3000 pF @ 50 V
    Gate charge (Qg) at different Vgs (maximum value) 71 nC @ 10 V
    Package/Enclosure PowerDI5060-8
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 100V
    Continuous drain current Id 9.4A(Ta),98A(Tc)
    driving voltage 4.5V,10V
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    In Stock :  5,000

    Qty. Unit Price Ext. Price
    9+ $0.8457 $7.6113
    100+ $0.7043 $70.43
    1,250+ $0.6404 $800.5

    Full Reel (Order in multiples of 2500)

    2,500+ $0.5932 $1,483

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 9 Mult. 1

    Special Note

    Production Date: Within 2 years

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