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MOSFET TO-252-3

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    MPN DMTH6004SK3-13
    Mfr. Diodes Incorporated
    Oneyac # A36-DMTH6004SK3-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 3.9W(Ta),180W(Tc)
    RdsOn(Max)@Id,Vgs 3.8mΩ@90A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4556 pF @ 30 V
    Gate charge (Qg) at different Vgs (maximum value) 95.4 nC @ 10 V
    Package/Enclosure TO-252-3
    working temperature -55℃~175℃(TJ)
    Drain source voltage Vds 60V
    Continuous drain current Id 100A(Tc)
    driving voltage 10V
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    In Stock :  1,595

    Qty. Unit Price Ext. Price
    9+ $0.7803 $7.0227
    100+ $0.6495 $64.95
    1,250+ $0.5917 $739.625

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 9 Mult. 1

    Special Note

    Production Date: 23+

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