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Power MOSFET TSOT-26

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    MPN DMG6601LVT-7
    Mfr. Diodes Incorporated
    Oneyac # A36-DMG6601LVT-7
    Supplier Oneyac
    Unleaded/RoHs Lead Free/Rohs
    Description
    N & P-Channel 30 V 110 mO Complementary Pair Enhancement Mode Mosfet

    Specifications FAQ

    Product Attribute Attribute Value Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 12.3nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 422pF @ 15V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TSOT-26
    Continuous drain current Id 3.8A,2.5A
    Pd power dissipation (Max) 1.3W
    QG gate charge 12.3nC,13.8nC
    Rds On(Max)@Id,Vgs 55mΩ,110mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 500mV,400mV
    rise time 7.4ns,4.6ns
    Descent time 15.6ns,2.2ns
    Typical shutdown delay time 31.2ns,18.3ns
    Typical connection delay time 1.6ns,1.7ns
    Series DMG6601
    Number of channels 2Channel
    to configure Dual
    FET type N-Channel
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    In Stock :  3,904

    Qty. Unit Price Ext. Price
    90+ $0.0831 $7.479
    200+ $0.0676 $13.52
    1,500+ $0.0615 $92.25

    Full Reel (Order in multiples of 3000)

    3,000+ $0.0576 $172.8

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 90 Mult. 1

    Special Note

    Production Date: Within 2 years

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