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Power MOSFET SOIC-8

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    MPN SI4909DY-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI4909DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : TrenchFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 63nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2000pF @ 20V
    Pd power dissipation (Max) 3.2W
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type P-Channel
    Continuous drain current Id 8A
    Rds On(Max)@Id,Vgs 27mΩ
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    In Stock :  1,173

    Qty. Unit Price Ext. Price
    20+ $0.6115 $12.23
    100+ $0.5111 $51.11

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    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 24+

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