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Power MOSFET SOT-23-3

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    MPN SI2333CDS-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI2333CDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    FET type P-Channel
    Continuous drain current Id 7.1A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 25nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1225pF @ 6V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 1.25W(Ta),2.5W(Tc)
    Rds On(Max)@Id,Vgs 35mΩ@5.1A,4.5V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    Drain source voltage Vds 12V
    Continuous drain current Id 5.1A
    Rds On(Max)@Id,Vgs 35mΩ
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    In Stock :  649

    Qty. Unit Price Ext. Price
    60+ $0.1261 $7.566
    200+ $0.0871 $17.42

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 60 Mult. 1

    Special Note

    Production Date: 23+

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