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Power MOSFET SOT-23-3

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    MPN SI2323DDS-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI2323DDS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 36nC @ 8V
    Input capacitance (Ciss) at different Vds (maximum value) 1160pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 960mW(Ta),1.7W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    FET type P-Channel
    Continuous drain current Id -5.3A
    Rds On(Max)@Id,Vgs 39mΩ@4.1A,4.5V
    Drain source voltage Vds -20V
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    In Stock :  1,606

    Qty. Unit Price Ext. Price
    30+ $0.2814 $8.442
    100+ $0.2252 $22.52
    750+ $0.2008 $150.6
    1,500+ $0.1887 $283.05

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: Within 2 years

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