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Power MOSFET TO-263

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    MPN IRF4905STRLPBF
    Mfr. Infineon
    Oneyac # A3-IRF4905STRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 55 V 3.8 W 180 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 180nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3500pF @ 25V
    Pd power dissipation (Max) 170W(Tc)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 180nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3500pF @ 25V
    Rds On(Max)@Id,Vgs 20mΩ@42A,10V
    FET type P-Channel
    Drain source voltage Vds 55V
    Continuous drain current Id 74A
    Package/Enclosure TO-263
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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