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Power MOSFET 8-PowerTDFN

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    MPN RS1L151ATTB1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3x-RS1L151ATTB1
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 56A(Tc)
    FET type P-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 11.3 milliohms @ 15A, 10V
    Vgs (th) (maximum value) for different IDs 2.5V @ 1mA
    Input capacitance (Ciss) at different Vds (maximum value) 6900 pF @ 30 V
    Gate charge (Qg) at different Vgs (maximum value) 130 nC @ 10 V
    Power dissipation (maximum value) 3W(Ta)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 60 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
    Package/Enclosure 8-PowerTDFN
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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