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Power MOSFET HUML

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    MPN RF4E070GNTR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3x-RF4E070GNTR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    30V, 7A, 21.4 MOHM, PQFN 2X2

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 4.8nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 220pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2W(Ta)
    Rds On(Max)@Id,Vgs 21.4mΩ@7A,10V
    working temperature 150°C(TJ)
    Package/Enclosure HUML
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 7A
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