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Power MOSFET HSMT-8

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    MPN RQ3E150GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3x-RQ3E150GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 15A
    Pd power dissipation (Max) 2W
    QG gate charge 15.3nC
    Rds On(Max)@Id,Vgs 6.1mΩ@15A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 5.8ns
    Descent time 7.8ns
    Typical shutdown delay time 34.4ns
    Typical connection delay time 11.6ns
    Package/Enclosure HSMT-8
    FET type N-Channel
    Forward transconductance - minimum value 13.5S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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