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Power Mosfet HSMT

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    MPN RQ3G100GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RQ3G100GNTB-0
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    MOSFET

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Series RQ
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) (maximum) at different Ids 2.5V @ 1mA
    Gate Charge (Qg) at Different Vgs (Maximum) 8.4nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum) 615pF @ 20V
    Operating temperature 150°C(TJ)
    Package/Enclosure HSMT
    Continuous Drain Current Id 10A
    Pd-power dissipation (Max) 2W
    Qg-gate charge 8.4nC
    Rds On(Max)@Id,Vgs 14.3mΩ@10A,10V
    Drain-source voltage Vds 40V
    Gate voltage Vgs ±20V
    Rise Time 4.2ns
    Fall time 3.2ns
    Typical off delay time 23.1ns
    Typical on-delay time 8ns
    Number of channels 1Channel
    Configuration Single
    fet type N-Channel
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    In Stock :  2,980

    Qty. Unit Price Ext. Price
    90+ $0.2311 $20.799
    100+ $0.225 $22.5
    500+ $0.225 $112.5
    1,000+ $0.2237 $223.7
    2,000+ $0.2225 $445

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 90 Mult. 1

    Special Note

    Production Year: 2023

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