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Power MOSFET 8-PowerVDFN

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    MPN RQ3L070ATTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RQ3L070ATTB-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 25A(Tc)
    FET type P-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 28 milliohms @ 7A, 10V
    Vgs (th) (maximum value) for different IDs 2.5V @ 1mA
    Input capacitance (Ciss) at different Vds (maximum value) 2850 pF @ 30 V
    Gate charge (Qg) at different Vgs (maximum value) 48 nC @ 10 V
    Power dissipation (maximum value) 2W(Ta)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 60 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
    Package/Enclosure 8-PowerVDFN
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    In Stock :  3,000

    Qty. Unit Price Ext. Price
    20+ $1.1714 $23.428
    50+ $0.7818 $39.09
    100+ $0.6255 $62.55
    500+ $0.5857 $292.85
    1,000+ $0.5619 $561.9
    2,000+ $0.5552 $1,110.4

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2022

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