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Power MOSFET 8-PowerVDFN

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    MPN RQ3G110ATTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RQ3G110ATTB-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 11A(Ta),35A(Tc)
    FET type P-Channel
    Gate voltage Vgs ±20V
    Rds On(Max)@Id,Vgs 12.4mΩ@11A,10V
    Vgs (th) (maximum value) for different IDs 2.5V @ 1mA
    Input capacitance (Ciss) at different Vds (maximum value) 2750 pF @ 20 V
    Gate charge (Qg) at different Vgs (maximum value) 46 nC @ 10 V
    Pd power dissipation (Max) 2W(Ta)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Drain source voltage Vds 40 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
    Package/Enclosure 8-PowerVDFN
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    In Stock :  315

    Qty. Unit Price Ext. Price
    20+ $1.4165 $28.33
    50+ $0.9435 $47.175
    100+ $0.7553 $75.53

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2022

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