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Power MOSFET HSMT-8

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    MPN RQ3E080GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RQ3E080GNTB-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 8A
    Pd power dissipation (Max) 2W
    QG gate charge 5.8nC
    Rds On(Max)@Id,Vgs 16.7mΩ@8A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 3.6ns
    Descent time 2.4ns
    Typical shutdown delay time 17.3ns
    Typical connection delay time 6.9ns
    Package/Enclosure HSMT-8
    FET type N-Channel
    Forward transconductance - minimum value 7S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  2,600

    Qty. Unit Price Ext. Price
    110+ $0.1975 $21.725
    500+ $0.1538 $76.9
    1,000+ $0.1485 $148.5
    2,000+ $0.1431 $286.2

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 110 Mult. 1

    Special Note

    Production Year: 2022

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