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Power MOSFET 8-PowerTDFN

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    MPN RS1E150GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RS1E150GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Gate charge (Qg) at different Vgs (maximum value) 10nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 590pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3W(Ta),22.9W(Tc)
    Rds On(Max)@Id,Vgs 8.8mΩ@15A,10V
    working temperature 150°C(TJ)
    Package/Enclosure 8-PowerTDFN
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 15A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
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    In Stock :  2,450

    Qty. Unit Price Ext. Price
    70+ $0.3366 $23.562
    100+ $0.3194 $31.94
    500+ $0.2452 $122.6
    1,000+ $0.2372 $237.2
    2,000+ $0.2359 $471.8

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 70 Mult. 1

    Special Note

    Production Year: 2022

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