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Power MOSFET HSOP-8

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    MPN RS1E170GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RS1E170GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSOP-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 17A
    Pd power dissipation (Max) 3W
    QG gate charge 12nC
    Rds On(Max)@Id,Vgs 6.7mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 2.5V
    rise time 4.8ns
    Descent time 3.7ns
    Typical shutdown delay time 27ns
    Typical connection delay time 10ns
    Package/Enclosure HSOP-8
    FET type N-Channel
    Forward transconductance - minimum value 13S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  2,490

    Qty. Unit Price Ext. Price
    60+ $0.3658 $21.948
    100+ $0.3485 $34.85
    500+ $0.2783 $139.15
    1,000+ $0.269 $269
    2,000+ $0.2571 $514.2

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 60 Mult. 1

    Special Note

    Production Year: 2019

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