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Power MOSFET HSOP-8

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MPN RS1E170GNTB
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-RS1E170GNTB
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : HSOP-8

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
Continuous drain current Id 17A
Pd power dissipation (Max) 3W
QG gate charge 12nC
Rds On(Max)@Id,Vgs 6.7mΩ
Drain source voltage Vds 30V
Gate voltage Vgs 2.5V
rise time 4.8ns
Descent time 3.7ns
Typical shutdown delay time 27ns
Typical connection delay time 10ns
Package/Enclosure HSOP-8
FET type N-Channel
Forward transconductance - minimum value 13S
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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In Stock :  2,490

Qty. Unit Price Ext. Price
40+ $0.6559 $26.236
50+ $0.4214 $21.07
100+ $0.3432 $34.32
500+ $0.2902 $145.1
1,000+ $0.2796 $279.6
2,000+ $0.2717 $543.4

Unit Price:$0.6559

Ext. Price:$26.236

When unpacking without original label and tray!
MPQ 2,500 ETD HK 1~2 Weeks
Min. 40 Mult. 1

Special Note

Production Year: 2019

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Qty. Unit Price
1: $0.7142
10: $0.6559
50: $0.4214
100: $0.3432
500: $0.2902
1000: $0.2796
2000: $0.2717
4000: $0.2664
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