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Power MOSFET DFN2020-8

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    MPN RF4E110GNTR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RF4E110GNTR-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : DFN2020-8 Series : RF4E110GN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 11A
    Pd power dissipation (Max) 2W
    QG gate charge 7.4nC
    Rds On(Max)@Id,Vgs 11.3mΩ@11A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 5.5ns
    Descent time 3ns
    Typical shutdown delay time 21ns
    Typical connection delay time 9ns
    Package/Enclosure DFN2020-8
    FET type N-Channel
    Forward transconductance - minimum value 6S
    Series RF4E110GN
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  2,490

    Qty. Unit Price Ext. Price
    80+ $0.2743 $21.944
    100+ $0.2611 $26.11
    500+ $0.2121 $106.05
    1,000+ $0.2121 $212.1
    2,000+ $0.2107 $421.4

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 80 Mult. 1

    Special Note

    Production Year: 2022

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