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Power MOSFET TO-252-3

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MPN R6002END3TL1
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A33-R6002END3TL1
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : TO-252-3

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
Continuous drain current Id 1.7A
Pd power dissipation (Max) 26W
QG gate charge 6.5nC
Rds On(Max)@Id,Vgs 3.4Ω
Drain source voltage Vds 600V
Gate voltage Vgs 2V
rise time 16ns
Descent time 60ns
Typical shutdown delay time 25ns
Typical connection delay time 12ns
Package/Enclosure TO-252-3
Forward transconductance - minimum value 0.5S
Number of channels 1Channel
to configure Single
working temperature -55°C~150°C
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In Stock :  1,736

Qty. Unit Price Ext. Price
30+ $0.799 $23.97
50+ $0.5632 $28.16
100+ $0.485 $48.5
500+ $0.4333 $216.65
1,000+ $0.4227 $422.7

Unit Price:$0.799

Ext. Price:$23.97

When unpacking without original label and tray!
MPQ 2,500 ETD HK 1~2 Weeks
Min. 30 Mult. 1

Special Note

Production Year: 2022

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