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Power MOSFET TO-252

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    MPN R8002KND3TL1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-R8002KND3TL1-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 1.6A(Ta)
    FET type N-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 4.2Ohm @ 800mA, 10V
    Vgs (th) (maximum value) for different IDs 4.5V @ 150uA
    Input capacitance (Ciss) at different Vds (maximum value) 140 pF @ 100 V
    Gate charge (Qg) at different Vgs (maximum value) 7.5 nC @ 10 V
    Power dissipation (maximum value) 30W(Tc)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
    Package/Enclosure TO-252
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    In Stock :  2,070

    Qty. Unit Price Ext. Price
    20+ $1.6338 $32.676
    50+ $1.0892 $54.46
    100+ $0.8706 $87.06
    500+ $0.8163 $408.15
    1,000+ $0.7845 $784.5
    2,000+ $0.7725 $1,545

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2021

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