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Power MOSFET 8-PowerTDFN

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    MPN RS1G260MNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RS1G260MNTB
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 26A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 44nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2988pF @ 20V
    Pd power dissipation (Max) 3W(Ta),35W(Tc)
    Rds On(Max)@Id,Vgs 3.3mΩ@26A,10V
    working temperature 150°C(TJ)
    Package/Enclosure 8-PowerTDFN
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    In Stock :  1,485

    Qty. Unit Price Ext. Price
    30+ $0.758 $22.74
    50+ $0.6705 $33.525
    100+ $0.5963 $59.63
    500+ $0.5963 $298.15
    1,000+ $0.595 $595

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2020

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