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Universal MOSFET CPT3

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    MPN R6004ENDTL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-R6004ENDTL
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : CPT3

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature 150°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
    technology MOSFET (Metal Oxide)
    FET type N channels
    Leakage source voltage (Vdss) 600V
    Input capacitance (Ciss) at different Vds (maximum value) 250pF @ 25V
    Package/Enclosure CPT3
    Current at 25 ° C - Continuous Drain (Id) 4A(Tc)
    Vgs (th) (maximum value) for different IDs 4V @ 1mA
    Power dissipation (maximum value) 20W(Tc)
    What is the gate charge at different Vgs? (Qg) (maximum value) 15nC @ 10V
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 980 milliohms @ 1.5A, 10V
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    In Stock :  1,699

    Qty. Unit Price Ext. Price
    40+ $0.6546 $26.184
    50+ $0.6228 $31.14
    100+ $0.591 $59.1
    500+ $0.5619 $280.95
    1,000+ $0.534 $534

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Year: 2021

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