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MOSFET SOT-223-3

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    MPN DMN3032LE-13
    Mfr. Diodes Incorporated
    Oneyac # A3-DMN3032LE-13
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : SOT-223-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 1.8W(Ta)
    RdsOn(Max)@Id,Vgs 29mΩ@3.2A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 498 pF @ 15 V
    Gate charge (Qg) at different Vgs (maximum value) 11.3 nC @ 10 V
    Package/Enclosure SOT-223-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 30V
    Continuous drain current Id 5.6A(Ta)
    driving voltage 4.5V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  25,000

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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