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Power MOSFET DFN2020-8

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    MPN RF4E080GNTR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RF4E080GNTR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : DFN2020-8 Series : RF4E080GN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 8A
    Pd power dissipation (Max) 2W
    QG gate charge 5.8nC
    Rds On(Max)@Id,Vgs 17.6mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 2.5V
    rise time 3.6ns
    Descent time 2.4ns
    Typical shutdown delay time 17.3ns
    Typical connection delay time 6.9ns
    Package/Enclosure DFN2020-8
    FET type N-Channel
    Forward transconductance - minimum value 5S
    Series RF4E080GN
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  100

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