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Power MOSFET HSMT

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    MPN RQ3G100GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RQ3G100GNTB
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    MOSFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series RQ
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 8.4nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 615pF @ 20V
    working temperature 150°C(TJ)
    Package/Enclosure HSMT
    Continuous drain current Id 10A
    Pd power dissipation (Max) 2W
    QG gate charge 8.4nC
    Rds On(Max)@Id,Vgs 14.3mΩ@10A,10V
    Drain source voltage Vds 40V
    Gate voltage Vgs ±20V
    rise time 4.2ns
    Descent time 3.2ns
    Typical shutdown delay time 23.1ns
    Typical connection delay time 8ns
    Number of channels 1Channel
    to configure Single
    FET type N-Channel
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    In Stock :  110 Lead Time:16W

    Qty. Unit Price Ext. Price
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    MPQ 3,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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