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Power MOSFET 8-PowerVDFN

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    MPN RQ3E120BNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RQ3E120BNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 12A
    Pd power dissipation (Max) 2W
    QG gate charge 29nC
    Rds On(Max)@Id,Vgs 9.3mΩ@12A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 30ns
    Descent time 12ns
    Typical shutdown delay time 46ns
    Typical connection delay time 9ns
    Package/Enclosure 8-PowerVDFN
    FET type N-Channel
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    In Stock :  200 Lead Time:16W

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