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Power Mosfet HSMT-8

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    MPN RQ3E080GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RQ3E080GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT-8 Operating temperature : -55°C~150°C

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Rds On(Max)@Id,Vgs 16.7mΩ@8A,10V
    Package/Enclosure HSMT-8
    Typical on-delay time 6.9ns
    Gate voltage Vgs ±20V
    Fall time 2.4ns
    Rise Time 3.6ns
    Operating temperature -55°C~150°C
    Qg-gate charge 5.8nC
    Typical off delay time 17.3ns
    Pd-power dissipation (Max) 2W
    Configuration Single
    Number of channels 1Channel
    Drain-source voltage Vds 30V
    fet type N-Channel
    Forward Transconductance-Minimum 7S
    Continuous Drain Current Id 8A
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    In Stock :  200

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