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Power MOSFET HSMT8

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MPN RH6G040BGTB1
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A-RH6G040BGTB1
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : HSMT8 Gate voltage Vgs : ±20V Rds On(Max)@Id,Vgs : 3.6mΩ@40A,10V

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
FET type N-Channel
Continuous drain current Id 95A
Drain source voltage Vds 40V
Package/Enclosure HSMT8
Pd power dissipation (Max) 59W
Gate voltage Vgs ±20V
Rds On(Max)@Id,Vgs 3.6mΩ@40A,10V
working temperature -55℃~150℃
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In Stock :  0

Qty. Unit Price Ext. Price
1,000+ $0.6337 $633.7

Unit Price:$0.6337

Ext. Price:$633.7

When unpacking without original label and tray!
MPQ 3,000 ETD HK Contact Us
Min. 1,000 Mult. 1

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