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Universal MOSFET 8-DSOP Advance

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    MPN TPWR8503NL,L1Q
    Mfr. Toshiba
    Oneyac # A-TPWR8503NL,L1Q
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-DSOP Advance

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 800mW(Ta),142W(Tc)
    Vgs(th) 2.3V @ 1mA
    Vgs (maximum value) ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 6900 pF @ 15 V
    Gate charge (Qg) at different Vgs (maximum value) 74 nC @ 10 V
    Product status On sale
    Package/Enclosure 8-DSOP Advance
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Drain source voltage Vds 30 V
    Continuous drain current Id 150A(Tc)
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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