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Universal MOSFET 8-DSOP Advance

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    MPN TPW1R104PB,L1XHQ
    Mfr. Toshiba
    Oneyac # A-TPW1R104PB,L1XHQ
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-DSOP Advance

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 960mW(Ta),132W(Tc)
    Vgs(th) 3V @ 500uA
    Vgs (maximum value) ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4560 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 55 nC @ 10 V
    Product status On sale
    Package/Enclosure 8-DSOP Advance
    working temperature 175°C
    technology MOSFET (Metal Oxide)
    Drain source voltage Vds 40 V
    Continuous drain current Id 120A(Ta)
    Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
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