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Power MOSFET TO-263-3

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    MPN IRFS4227TRLPBF
    Mfr. Infineon
    Oneyac # A3-IRFS4227TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 200 V 26 mOhm 98 nC 330 W Surface Mount Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 98nC @ 10V
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum value) 4600pF @ 25V
    Pd power dissipation (Max) 330W(Tc)
    working temperature -40°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 98nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4600pF @ 25V
    Rds On(Max)@Id,Vgs 26mΩ@46A,10V
    FET type N-Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 62A
    Package/Enclosure TO-263-3
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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    In Stock :  96,000 Lead Time:14W

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