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MOSFET TO-252-3

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    MPN ZXMN10A25KTC
    Mfr. Diodes Incorporated
    Oneyac # A-ZXMN10A25KTC
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 2.11W(Ta)
    RdsOn(Max)@Id,Vgs 125mΩ@2.9A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 859 pF @ 50 V
    Gate charge (Qg) at different Vgs (maximum value) 17.16 nC @ 10 V
    Package/Enclosure TO-252-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 100V
    Continuous drain current Id 4.2A(Ta)
    driving voltage 6V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    Min. 1 Mult. 1

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